... Simulation of Thermal Transport at a Nanometer Scale Constriction in Silicon ,” J. Appl. Phys. , 101 ( 7 ), p. 074304 . 10.1063/1.2715488 [22] Prasher , R. , Tong , T. , and Majumdar , A. , 2007 , “ Diffraction-Limited Phonon Thermal Conductance of Nanoconstrictions ,” Appl. Phys. Lett...

...Bradley Bon; James Klausner; Edward McKenna All test surfaces were fabricated from undoped single crystal silicon wafers. Fabrication of the cylindrical cavities, illustrated in Fig. 2 , proceeds by initially spin coating a 2  μ m layer of photoresist onto a silicon wafer. The photoresist...

...Amy M. Marconnet; Mehdi Asheghi; Kenneth E. Goodson Manuscript received October 14, 2012; final manuscript received December 20, 2012; published online May 16, 2013. Assoc. Editor: Leslie Phinney. 14 10 2012 20 12 2012 Silicon-on-insulator (SOI) technology has sparked...

...David Lacroix; Karl Joulain; Jerome Muller; Gilles Parent This study deals with phonon heat transport in silicon nanowires. A review of various methods that can be used to assess thermal conductance of such nanodevices is presented. Here, a specific attention is paid to the case of the Landauer...

... single frequency excitations consisting of superposed spatial modes. These mode shapes are used to excite the waveguide inlet boundary so that single phonon modes are generated in the structure. Mode shapes and phonon spectra for a silicon planar waveguide with rigid wall boundaries are calculated...

... by stretching the pulse can be predicted well using the TTM. In this study, we employ TTR techniques to investigate interface heat transfer for thin gold films of varying thicknesses on silicon substrates. (Here, we consider silicon as a dielectric since heat is carried by phonons in silicon.) Similar...

... volume fractions and superlattice periods. Details of the nonequilibrium energy exchange between optical and acoustic phonons that originate from the mismatch of phonon spectra in silicon and germanium are delineated for the first time. Conditions are identified for which this effect can produce...

... matrix for each polarization. A decomposed self-energy is calculated from the density of states matrix for each polarization and used to calculate the transmission function for a particular phonon branch. In a pure bulk material such as silicon, each transmission function exhibits a frequency-independent...

...Nenad Miljkovic; Ryan Enright; Shalabh C. Maroo; H. Jeremy Cho; Evelyn N. Wang 27 04 2011 27 04 2011 capillarity drops elemental semiconductors evaporation flow visualisation hydrophilicity hydrophobicity nanostructured materials scanning electron microscopy silicon...

... germanium heat transfer interface phenomena molecular dynamics method phonons silicon thermal conductivity thermal boundary conductance phonon classical limit silicon germanium diffuse mismatch model molecular dynamics The phonon thermal boundary conductance between two solids...

... transfer performance of pool boiling systems is not adequate to match the cooling ability provided by enhanced microchannels operating under single-phase conditions. The objective of this work is to evaluate the pool boiling performance of structured surface features etched on a silicon chip...

...-time signal in phonon wave space. The phonon transmissivity is calculated by measuring the phonon energy change before and after the interface scattering. Phonon wave propagation along a specific direction [100] in silicon lattice has been studied and the following conclusions are drawn...

... solving the BTE in space and time subject to different boundary and initial conditions. We apply our hierarchical model to estimate the silicon out-of-plane thermal conductivity and the thermal response of an silicon on insulator (SOI) device subject to Joule heating. We have found that relative phonon...

... duration is smaller than the relaxation time of the carriers or phonons or when the carriers’ or phonons’ mean free path is larger than the material dimension, these macroscopic models fail to capture the physics accurately. In this article, the nonequilibrium between carriers and phonons in silicon films...

... gas, which is approximately two orders of magnitude larger than the relaxation time adopted in the CV-wave model for the lattices. A numerical example for fast transient heat conduction in a silicon film is presented to show that the temperature peaks resulting from the thermomass model are much...

... gas. High spatial resolution Raman thermometry was used to measure the temperature profiles on electrically heated, polycrystalline silicon bridges that are nominally 10 μ m wide, 2.25 μ m thick, and either 200 μ m or 400 μ m long in nitrogen atmospheres with pressures ranging from 0.05 Torr to 625...

... phonons modes, especially at room temperature, where optical modes are found to carry about 25% of the energy at steady state in silicon thin films. Most importantly, it is found that inclusion of optical phonons results in better match with experimental observations for silicon thin-film thermal...

..., originally developed to describe the frequency-dependent conductivity of metals, was employed to model the free-carrier absorption of doped Si in many studies ( 7 8 ). For doped silicon in the infrared region ( λ > 2   μ m ) , the Drude model gives the dielectric function or relative...

...S. Basu; B. J. Lee; Z. M. Zhang This paper describes a theoretical investigation of near-field radiative heat transfer between doped silicon surfaces separated by a vacuum gap. An improved dielectric function model for heavily doped silicon is employed. The effects of doping level, polarization...

...Javier V. Goicochea; Marcela Madrid; Cristina Amon Molecular dynamics simulations are performed to estimate acoustical and optical phonon relaxation times, dispersion relations, group velocities, and specific heat of silicon needed to solve the Boltzmann transport equation (BTE) at 300 K and 1000 K...