This work is a numerical and experimental investigation of the effect of the use of a metallic absorption layer on the laser-based measurements of the thermal conductivity of dielectric, semiconductor, and highly-conductive materials. The specific experimental studies, which were carried out on silicon dioxide samples, were used to validate the numerical approach and to support the findings of this investigation. The numerical and supporting experimental results reveal the presence of behaviors associated with thermally thin and thermally thick absorption layers, depending on the ratio between the thickness of the absorption layer and the heat penetration depth. It is concluded that the TTR method performs optimally when the thickness of the metalization layer falls in the transition range between the identified thermally thin and thermally thick layers.
A Study of the Effect of Surface Metalization on Thermal Conductivity Measurements by the Transient Thermo-Reflectance Method
Contributed by the Heat Transfer Division for publication in the JOURNAL OF HEAT TRANSFER. Manuscript received by the Heat Transfer Division December 20, 2001; revision received July 24, 2002. Associate Editor: G. Chen.
Burzo , M. G., Komarov , P. L., and Raad, P. E. (December 3, 2002). "A Study of the Effect of Surface Metalization on Thermal Conductivity Measurements by the Transient Thermo-Reflectance Method ." ASME. J. Heat Transfer. December 2002; 124(6): 1009–1018. https://doi.org/10.1115/1.1517265
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