As integrated circuits are advancing toward smaller device features, step-coverage in submicron trenches and holes in thin film deposition are becoming of concern. Deposition consists of gas flow in the vapor phase and film growth in the solid phase. A deposition profile simulator using the direct simulation Monte Carlo method has been developed to investigate deposition profile characteristics on small trenches which have nearly the same dimension as the mean free path of molecules. This simulator can be applied to several deposition processes such as sputter deposition, and atmospheric- or low-pressure chemical vapor deposition. In the case of low-pressure processes such as sputter deposition, upstream boundary conditions of the trenches can be calculated by means of rarefied gas flow analysis in the reactor. The effects of upstream boundary conditions, molecular collisions, sticking coefficients, and surface migration on deposition profiles in the trenches were clarified.
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June 1998
Research Papers
Study on the Deposition Profile Characteristics in the Micron-Scale Trench Using Direct Simulation Monte Carlo Method
Masato Ikegawa,
Masato Ikegawa
Mechanical Engineering Research Laboratory, Hitachi Ltd., 502 Kandatsu, Tsuchiura, Ibaraki 300-0013, Japan
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Jun’ichi Kobayashi,
Jun’ichi Kobayashi
Mechanical Engineering Research Laboratory, Hitachi Ltd., 502 Kandatsu, Tsuchiura, Ibaraki 300-0013, Japan
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Morihisa Maruko
Morihisa Maruko
Hiroshima Women’s Commercial College, Sakacho, Aki-gun, Hiroshima 731-4300, Japan
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Masato Ikegawa
Mechanical Engineering Research Laboratory, Hitachi Ltd., 502 Kandatsu, Tsuchiura, Ibaraki 300-0013, Japan
Jun’ichi Kobayashi
Mechanical Engineering Research Laboratory, Hitachi Ltd., 502 Kandatsu, Tsuchiura, Ibaraki 300-0013, Japan
Morihisa Maruko
Hiroshima Women’s Commercial College, Sakacho, Aki-gun, Hiroshima 731-4300, Japan
J. Fluids Eng. Jun 1998, 120(2): 296-302 (7 pages)
Published Online: June 1, 1998
Article history
Received:
March 7, 1997
Revised:
March 3, 1998
Online:
December 4, 2007
Citation
Ikegawa, M., Kobayashi, J., and Maruko, M. (June 1, 1998). "Study on the Deposition Profile Characteristics in the Micron-Scale Trench Using Direct Simulation Monte Carlo Method." ASME. J. Fluids Eng. June 1998; 120(2): 296–302. https://doi.org/10.1115/1.2820648
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