...Ayan Basu; Gaurav Singh In the present work, an atomistic scale investigation is done on crystalline silicon to understand the effect of crack depth from the loading (pulling) boundary on the critical near-tip state of stress. For various depths of embedded cracks, the near-tip stress field has...

... mechanisms are proposed and analyzed that require neither motion of the shuttle nor high temperatures that last long enough to produce thermal degradation of the silicon (above ∼ 700 ° C for ∼ 1 min , according to Ref. 5 , as opposed to the microsecond timescale relevant to ESD...

...Peter A. Gustafson; Stephen J. Harris; Ann E. O’Neill; Anthony M. Waas Micro-Raman spectroscopy is used to determine the multiaxial stress state in silicon wafers using a strategy proposed by Narayanan, et al. (J. Appl. Phys. 82, 2595–2602 (1997)) Previously, this strategy was validated when...

...I. Chasiotis; S. W. Cho; K. Jonnalagadda The fracture behavior of polycrystalline silicon in the presence of atomically sharp cracks is important in the determination of the mechanical reliability of microelectromechanical system (MEMS) components. The mode-I critical stress intensity factor...

... and atomic displacement distributions for an atomically sharp crack in Cu, where one observes the emission of a partial dislocation loop, and in Si, where crack front extension evolves in a kink-like fashion. 05 10 2004 05 10 2005 copper silicon elemental semiconductors cracks ductility...

..., Santa Barbara, CA 93106-5070, and will be accepted until four months after final publication in the paper itself in the ASME JOURNAL OF APPLIED MECHANICS . 28 August 2003 15 April 2004 09 11 2004 germanium silicon elemental semiconductors semiconductor quantum dots...

... of nanostructures. 27 10 2003 06 10 2004 silicon elemental semiconductors vacancies (crystal) semiconductor thin films internal stresses elasticity stress effects impurity-vacancy interactions Surface processes such as material deposition onto a substrate, surface...

... for a spherical initial curvature. The results are particularly discussed in relation to curvature measurements on Silicon substrates. 2 The dimensionless displacement correction f ¯ = 2 w c / a 2 T β α α 1 as a function of dimensionless radius r...