Research Papers

Sensing Behavior of Magnetorheological Elastomers

[+] Author and Article Information
Xiaojie Wang, Faramarz Gordaninejad, Mert Calgar, Yanming Liu

Department of Mechanical Engineering, Composite and Intelligent Materials Laboratory, University of Nevada, Reno, NV 89557

Joko Sutrisno, Alan Fuchs

Department of Chemical and Metallurgical Engineering, Polymer Science Laboratory, University of Nevada, Reno, NV 89557

J. Mech. Des 131(9), 091004 (Aug 17, 2009) (6 pages) doi:10.1115/1.3160316 History: Received November 28, 2008; Revised April 23, 2009; Published August 17, 2009

A magnetorheological elastomer (MRE) is comprised of ferromagnetic particles aligned in a polymer medium by exposure to a magnetic field. The structures of the magnetic particles within elastomers are very sensitive to the external stimulus of either mechanical force or magnetic field, which result in multiresponse behaviors in a MRE. In this study, the sensing properties of MREs are investigated through experimentally characterizing the electrical properties of MRE materials and their interfaces with external stimulus (magnetic field or stress/strain). A phenomenological model is proposed to understand the impedance response of MREs under mechanical loads and magnetic fields. Results show that MRE samples exhibit significant changes in measured values of impedance and resistance in response to compressive deformation, as well as the applied magnetic field.

Copyright © 2009 by American Society of Mechanical Engineers
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Figure 1

MRE samples prepared at UNR

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Figure 2

Scanning electron microscopy photos of silicone RTV—MRE: Left—nonoriented; right—oriented

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Figure 3

Schematic of experiment setup (uniaxial compression)

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Figure 4

(a) The magnitude and (b) phase angle of the impedance versus frequency for MRE sample with 50 wt % particles under 0–0.65 T magnetic fields subjected to 0.2 strain

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Figure 5

The MI ratio (a) and phase angle changes (b) of MRE sample with 70 wt % ferromagnetic particles as a function of applied currents at room temperature and frequency of 1.8 KHz

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Figure 6

Schematic of microstructure of MREs and impedance measurement

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Figure 7

Equivalent circuit model

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Figure 8

Impedance spectra of MRE with 50 wt % particles under 0.46 T, 0.55 T, and 0.65 T magnetic fields, subjected to 0.2 strain

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Figure 9

Piezoresistance of silicon RTV MRE with 50 wt % particles

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Figure 10

Magnetoresistance of silicon RTV MREs with 30 wt %, 50 wt %, and 70 wt % particles

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Figure 11

Impedance spectra of RTV MRE sample with 70 wt % particles subjected to 20 tests




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