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Research Papers

Dynamic Electromechanical Field Concentrations Near Electrodes in Piezoelectric Thick Films for the Design of MEMS Mirrors

[+] Author and Article Information
Yasuhide Shindo1

Department of Materials Processing, Graduate School of Engineering,  Tohoku University, Aoba-yama 6–6-02, Sendai 980–8579, Japanshindo@material.tohoku.ac.jp

Fumio Narita

Department of Materials Processing, Graduate School of Engineering,  Tohoku University, Aoba-yama 6–6-02, Sendai 980–8579, Japannarita@material.tohoku.ac.jp

Koji Sato

Department of Materials Processing, Graduate School of Engineering,  Tohoku University, Aoba-yama 6–6-02, Sendai 980–8579, Japan

1

Corresponding author.

J. Mech. Des 134(5), 051005 (Apr 25, 2012) (6 pages) doi:10.1115/1.4006265 History: Received December 10, 2010; Revised February 18, 2012; Published April 24, 2012; Online April 25, 2012

This paper studies the dynamic electromechanical response of piezoelectric mirrors driven by piezoelectric lead zirconate titanate (PZT) thick films both numerically and experimentally. The resonant frequency and the mirror tilt angle of piezoelectric mirrors under ac electric fields were analyzed by three-dimensional finite element method. The dynamic electromechanical field concentrations due to electrodes were also simulated and the results were discussed in detail. The mirrors consisted of four partially poled PZT unimorphs. The resonant frequency was then measured, and a comparison was made between the analysis and the experiment. The finite element method is shown to be capable of estimating the electromechanical field concentrations in the PZT films, making it a useful tool for designing future microelectromechanical systems (MEMS) mirrors.

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Copyright © 2012 by American Society of Mechanical Engineers
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Figures

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Figure 1

Geometry and dimensions of mirror device

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Figure 2

A cross-section of the (a) wide and (b) narrow unimorph PZT actuator beams

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Figure 3

Three-dimensional geometry of the finite element model

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Figure 4

Electrical loading condition and mirror tilt angle

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Figure 5

Experimental setup

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Figure 6

Images of poling for the wide PZT thick film at (a) E0  = 0 V/m, (b) E0  = Ec  = 0.7 MV/m, and (c) E0  = 2Ec  = 1.4 MV/m

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Figure 7

Tilt angle versus frequency for mirror device

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Figure 8

Mirror tilt angle versus electric field for mirror device

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Figure 9

Normal stress distribution along the width direction at x = 25 mm and z = 95 μm for wide PZT thick film under |θ| = 30 deg at f = 10.39 kHz

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Figure 10

Normal stress distribution along the length direction at y = 0 and 5 mm and z = 95 μm for wide PZT thick film under |θ| = 30 deg at f = 10.39 kHz

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Figure 11

Normal stress distribution along the length direction at x = 0 mm and z = 95 μm for narrow PZT thick film under |θ| = 30 deg at f = 10.39 kHz

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Figure 12

Electric field distribution along the width direction at x = 20 and 25 mm and z = 95 μm for wide PZT thick film under |θ| = 30 deg at f = 10.39 kHz

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Figure 13

Electric field distribution along the length direction at y = 0 and 5 mm and z = 95 μm for wide PZT thick film under |θ| = 30 deg at f = 10.39 kHz

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Figure 14

Electric field distribution along the length direction at x =  ± 1 mm and z = 95 μm for narrow PZT thick film under |θ| = 30 deg at f = 10.39 kHz

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